利用2.5MeV质子静电加速器调制成微秒宽度的单次脉冲束流，照射国产离子注入PIN及Au-Si面垒型探测器表面后，观察从示波器屏幕上同时拍摄的探测器输出波形和束流波形并加以比较，由此观察耗尽区内部电荷积累对平顶畸变、收集时间大小的影响及收集效率等参数。

A microsecond width single pulse beam has been modulated from a 2.5 MeV Vam de Graaff accelerator. With the beam falling on the surface of a PIN or Au-Si surface barrier semiconductor detector

the wave shapes of the detector output current and the beam current were photographed simultaneously and compared with each other to find the influence of charge deposition in depletion region on the time plateau of the current wave shape and the collecting time

thus to obtain the collecting efficiency and other parameters. Under different beam magnitudes and biases

changes in output current wave shapes of some home-made PIN and Au-Si detectors were measured.