5—20 keV As+ and BF2+ implantation and rapid thermal annealing for forming ultra-shallow junctions

Chenglu Lin; Anmin Guan; Haiyang Geng

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5—20 keV As⁺ and BF₂⁺ implantation and rapid thermal annealing for forming ultra-shallow junctions

更新时间：2022-08-16

- 5—20 keV As⁺ and BF₂⁺ implantation and rapid thermal annealing for forming ultra-shallow junctions
- Nuclear Techniques Vol. 11, Issue 8, (1988)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：24 September 1987，
  
  Published：1988-08
- 稿件说明：
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Chenglu Lin, Anmin Guan, Haiyang Geng. 5—20 keV As⁺ and BF₂⁺ implantation and rapid thermal annealing for forming ultra-shallow junctions[J]. Nuclear techniques, 1988, 11(8): 13-16.
DOI：

Chenglu Lin, Anmin Guan, Haiyang Geng. 5—20 keV As⁺ and BF₂⁺ implantation and rapid thermal annealing for forming ultra-shallow junctions[J]. Nuclear techniques, 1988, 11(8): 13-16. DOI：

摘要

利用能量为5—20keV、剂量为5×10

-5×10

-2

的BF

和As

注入硅中，以快速热退火激活杂质并控制杂质的扩散再分布，可以得到结深~100nm、薄层电阻~60

Ω

/口的突变p

-n和n

-p超浅结。

Abstract

and BF

were implanted in Si with energies ranging from 5 to 20 keV and doses ranging from 5×10

/cm

to 5×10

/cm

. Rapid thermal annealing(RTA) is used to activate implants and control their diffusive redistribution. Our results indicate that abrupt n

-p and p

-n junctions as shallow as 100nm can be produced with corresponding sheet resistances as low as 60

Ω

/口.

关键词

Keywords

references

D. Eirug Davies and E. F. Kennedy , Nucl. Instr. Meth. Phys. Res. , B19/ 20 （ 1987 ）, 359 .

S. B. Felch and R. A. Powell , Nucl. Instr. Meth. Phys. Res. , B21 （ 1987 ）, 486 .

J. Narayan and O. W. Holland , J. Appl. Phys. 56 ,（ 1984 ）, 2913 .

朱蔚雯等，物理学报， 35 （ 1986 ）， 797 。

林成鲁等，电子学报， 15 （ 1987 ）， 101 。

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