Failure of low dose rate for systems and accelerated simulating test methods

CHEN Panxun

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Failure of low dose rate for systems and accelerated simulating test methods

更新时间：2021-03-12

- Failure of low dose rate for systems and accelerated simulating test methods
- NUCLEAR TECHNIQUES Issue 2, (2003)
- 作者机构：
  
  中国工程物理研究院电子工程研究所,绵阳,621900
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432
- Published：01 February 2003
- 稿件说明：
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[1]陈盘训.系统低剂量率失效和加速模拟试验方法[J].核技术,2003(02):132-136.

CHEN Panxun. Failure of low dose rate for systems and accelerated simulating test methods[J]. Nuclear techniques, 2003, (2): 132-136.
[1]陈盘训.系统低剂量率失效和加速模拟试验方法[J].核技术,2003(02):132-136. DOI：

CHEN Panxun. Failure of low dose rate for systems and accelerated simulating test methods[J]. Nuclear techniques, 2003, (2): 132-136. DOI：

摘要

综述双极器件和双极线性电路在低剂量率辐射环境下的增强损伤

它可引起系统的早期失效。分析了引起低剂量率失效的物理机制

它与MOS器件电离辐射的损伤机制完全不同。为了缩短模拟试验时间和提高效/费比

研究了几种加速模拟试验方法

并对处于低剂量率下系统的加固保证也提出了一些看法。

Abstract

The enhanced damage was summarized for bipolar devices and bipolar linear circuits in the radiation environment of low dose rate. It could cause the early failure of systems. The physical mechanism of producing failure of low dose rate was analyzed. This is totally different from the damage mechanism of MOS devices caused by ionizing radiation. In order to shorten the time of simulating test and to raise the ratio of effectiveness/spending

several test methods of accelerating simulation were researched. Some points of view were put forward on system hardness assurance at low dose rate.

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