Study of hard diamond-like carbon films deposited in  an inductively coupled plasma source

YU Shiji1  MA Tengcai2   1

doi:null

您当前的位置：

首页 >

文章列表页 >

Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

更新时间：2021-03-12

- Study of hard diamond-like carbon films deposited in an inductively coupled plasma source
- NUCLEAR TECHNIQUES Issue 2, (2003)
- 作者机构：
  
  1. 中国科学院电子学研究所
  2. 大连理工大学物理系,北京,100080
  3. ,大连,116024
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(50002002;19835030)
- DOI：
  CLC： TB43
- Published：01 February 2003
- 稿件说明：
移动端阅览
[1]俞世吉,马腾才.感应耦合等离子体源制备硬质类金刚石膜的研究[J].核技术,2003(02):125-128.

YU Shiji1 MA Tengcai2 1. Study of hard diamond-like carbon films deposited in an inductively coupled plasma source[J]. Nuclear techniques, 2003, (2): 125-128.
[1]俞世吉,马腾才.感应耦合等离子体源制备硬质类金刚石膜的研究[J].核技术,2003(02):125-128. DOI：

YU Shiji1 MA Tengcai2 1. Study of hard diamond-like carbon films deposited in an inductively coupled plasma source[J]. Nuclear techniques, 2003, (2): 125-128. DOI：

摘要

采用感应耦合等离子体源（ICPS）成功地实现化学气相沉积硬质类金刚石（DLC）膜

并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜

并且在相对较低的基片负偏压条件就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。

Abstract

Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy

microhardness

deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage

and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation

Properties of Cr+Ti+TiNC/TiNC+C/DLC films prepared by composite ion plating

Related Author

QIN Lizhao1

3 WU Zhenglong2 ZHANG Xu1 LIU Andong1 LIAO Bin1 1

张旭

刘安东

廖斌

MA Shengge1 YU Dayang2 YANG Hongwei1 ZHANG Yichen2 1

于大洋

杨宏伟

Related Institution

Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China) 2

遵义师范学院物理系

北京师范大学分析测试中心

National Research and Development Center for Surface Engineering of Shenzhen, Shenzhen 518029, China) 2

东北大学机械工程及自动化学院

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881003 Visits Today：530

⁰