根据 P 沟道金属氧化物场效应晶体管 (PMOSFET) 在低能脉冲 X 射线辐照下的实验结果、结合PMOSFET 实验样品的结构分析了阈电压漂移产生的机理。
Abstract
The PMOSFET was irradiated by low energy pulse X-rays and its threshold voltage was continuously measured. Based on the experimental results and the structure of PMOSFET