Hot-carrier injection induced interface states in MOS structure and their annealing characteristics

YU Xuefeng AI Erken REN Diyuan GUO Qi ZHANG Guoqiang LU Wu

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Hot-carrier injection induced interface states in MOS structure and their annealing characteristics

更新时间：2021-03-12

- Hot-carrier injection induced interface states in MOS structure and their annealing characteristics
- NUCLEAR TECHNIQUES Issue 1, (2006)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 中国科学院新疆物理研究所,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：01 January 2006
- 稿件说明：
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[1]余学峰,艾尔肯,任迪远,郭旗,张国强,陆妩.MOS结构热载流子注入感生界面态及其退火特性[J].核技术,2006(01):19-21.

YU Xuefeng AI Erken REN Diyuan GUO Qi ZHANG Guoqiang LU Wu. Hot-carrier injection induced interface states in MOS structure and their annealing characteristics[J]. Nuclear techniques, 2006, (1): 19-21.
[1]余学峰,艾尔肯,任迪远,郭旗,张国强,陆妩.MOS结构热载流子注入感生界面态及其退火特性[J].核技术,2006(01):19-21. DOI：

YU Xuefeng AI Erken REN Diyuan GUO Qi ZHANG Guoqiang LU Wu. Hot-carrier injection induced interface states in MOS structure and their annealing characteristics[J]. Nuclear techniques, 2006, (1): 19-21. DOI：

摘要

本文对N型MOS电容进行了Fowler-Nordheim衬底热电子高场注入—室温退火—再次热电子注入—再次退火试验

并利用高频C-V及准静态C-V分析技术

从微观界面态热电子注入的感生及室温退火等角度研究了MOS结构热载子损伤及退火特性

为全面揭示SHE热载子损伤机制及发展抗热载子损伤的加固技术研究提供了基础。

Abstract

By hot-carrier injecting and room temperature annealing repeatedly

responses of the MOS structure to the hot-carrier injection and annealing characteristics have been studied using the technique of c-v analyses. The mechanism of hot-carrier injection induced damage in the MOS structure has also been investigated in view of generation and annealing of the interface states.

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Related Author

郭旗

陆妩

余学锋

任迪远

严荣良

石见见

赵文增

郭雪莲

Related Institution

Xinjiang Institute of Physics, The Chinese Academy of Sciences

School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University

Institute of Modern Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

Lanzhou University

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