Dose-rate effects on PMOSFETs of various types

LAN Bo1; 2 GUO Qi1 SUN Jing1 CUI Jiangwei1; 2 LI Maoshun1; 2 FEI Wuxiong1; 2 CHEN Rui1; 2 ZHAO Yun1; 2 1

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Dose-rate effects on PMOSFETs of various types

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- Dose-rate effects on PMOSFETs of various types
- NUCLEAR TECHNIQUES Vol. 33, Issue 7, (2010)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所,新疆电子信息材料与器件重点实验室
  2. 中国科学院研究生院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：01 July 2010
- 稿件说明：
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[1]兰博,郭旗,孙静,崔江维,李茂顺,费武雄,陈睿,赵云.不同型号PMOSFETs的剂量率效应研究[J].核技术,2010,33(07):543-546.

LAN Bo1, 2 GUO Qi1 SUN Jing1 CUI Jiangwei1, 2 LI Maoshun1, et al. Dose-rate effects on PMOSFETs of various types[J]. Nuclear techniques, 2010, 33(7): 543-546.
[1]兰博,郭旗,孙静,崔江维,李茂顺,费武雄,陈睿,赵云.不同型号PMOSFETs的剂量率效应研究[J].核技术,2010,33(07):543-546. DOI：

LAN Bo1, 2 GUO Qi1 SUN Jing1 CUI Jiangwei1, 2 LI Maoshun1, et al. Dose-rate effects on PMOSFETs of various types[J]. Nuclear techniques, 2010, 33(7): 543-546. DOI：

摘要

对比研究了国内外五种不同型号的PMOSFETs

在不同剂量率、不同偏置条件下的辐照响应特性;并对高剂量率辐照后的器件进行了与低剂量率辐照等时的室温退火。结果表明

随着辐照累积剂量的增加

所有器件阈值电压的漂移都更加明显;不同型号的器件在不同条件下

表现出了时间相关（TDE）和低剂量率损伤增强（ELDRS）两种不同的剂量率效应。因此

ELDRS效应在PMOSFETs器件中并不是普遍存在的。

Abstract

The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors(PMOSFETs) of different types

i.e.HCF4007UB of ST

Italy;CC4007B

a homemade transistor in China

and 3SJ11A

2SJ196 and 2SJ178 of NEC

Japan;were investigated at different dose rates and bias conditions.The results show that the shift of threshold voltage increases with the total-dose.Under various conditions

different dose-rate effects(time-dependent effect and enhanced low-dose-rate sensitivity) can be observed for the types of devices.So the radiation-induced ELDRS in the PMOSFETs is not a universal phenomenon.

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