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西北核技术研究所
Published:01 July 2010
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[1]郭红霞,王伟,罗尹虹,赵雯,郭晓强,张科营.新型微电子技术单粒子效应研究面临的挑战[J].核技术,2010,33(07):538-542.
GUO Hongxia WANG Wei LUO Yinhong ZHAO Wen GUO Xiaoqiang ZHANG Keying. Future challenges in single event effects for advanced CMOS technologies[J]. Nuclear techniques, 2010, 33(7): 538-542.
随着器件特征尺寸的减小
单粒子效应成为影响CMOS工艺空间辐射环境可靠性的关键因素之一。未来航天和国防系统需要了解新型工艺中的单粒子效应损伤机制及其加固方法
包括在器件几何尺寸和材料方面的改变如何影响到能量淀积、电荷收集、电路翻转、参数退化等等。分析了随着特征尺寸减小
在高速数字电路中的单粒子瞬态效应SET的影响
包括由质子的直接电离作用产生的单粒子效应、粒子能量效应和非直接电离对单粒子效应的影响。对可能替代体硅器件的新型器件单粒子能力进行了简要介绍。
SEE have became a substantial Achilles heel for the reliability of space-based advanced CMOS technologies with features size downscaling.Future space and defense systems require identification and understanding of single event effects to develop hardening approaches for advanced technologies
including changes in device geometry and materials affect energy deposition
charge collection
circuit upset
parametric degradation devices.Topics covered include the impact of technology scaling on radiation response
including single event transients in high speed digital circuits
evidence for single event effects caused by proton direct ionization
and the impact for SEU induced by particle energy effects and indirect ionization.The single event effects in CMOS replacement technologies are introduced briefly.
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