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Investigation of strain in SiGe/Si (100) heteroepitaxial material by various characterization technology
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    • Investigation of strain in SiGe/Si (100) heteroepitaxial material by various characterization technology

    • NUCLEAR TECHNIQUES   Issue 4, (2005)
    • CLC： TN304

    • Published：01 April 2005

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  • CHEN Changchun1 YU Benhai1 LIU Jiangfeng1 CAO Jianqing2 ZHU Dezhang2 1. Investigation of strain in SiGe/Si (100) heteroepitaxial material by various characterization technology[J]. Nuclear techniques, 2005, (4): 277-281. DOI：

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