“Gallium nitride power devices have attracted much attention in the field of radiation resistance applications. Conduct gamma ray irradiation and annealing tests under different bias conditions for enhanced AlGaN/GaN high electron mobility transistor devices, and analyze the electrical performance response of the devices. The results indicate that as the irradiation dose increases, the device characteristics degrade, and high-temperature annealing helps to restore performance. Provide data support for the evaluation of space environment applications of gallium nitride devices.”