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Transient radiation response of SOI transistors and SOI devices
NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2024-10-25
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    • Transient radiation response of SOI transistors and SOI devices

    • “In the field of instantaneous ionizing radiation effect research, experts have conducted irradiation tests on SOI devices and integrated circuits using laser devices and pulsed gamma ray radiation sources, revealing their differences from bulk silicon devices and providing new ideas for related research.”
    • NUCLEAR TECHNIQUES   Vol. 47, Issue 4, Article number: 040402(2024)

    • DOI：10.11889/j.0253-3219.2024.hjs.47.040402    

      CLC： TN386.1

    • Received：23 July 2023，

      Revised：18 September 2023，

      Published：15 April 2024

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  • DU Chuanhua,DUAN Binghuang,XIONG Cen,et al.Transient radiation response of SOI transistors and SOI devices[J].NUCLEAR TECHNIQUES,2024,47(04):040402. DOI： 10.11889/j.0253-3219.2024.hjs.47.040402.

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