By studying the total ionizing dose effect of commercial CMOS static random access memory(SRAM) under seven bias conditions

including static and dynamic state

the relationship of power dissipation current and functional error number versus total ionizing dose are obtained.The results show that bias condition has great influences on degradation of SRAM.Compared to the five static bias conditions

the dynamic operating state is relatively not sensitive to irradiation

with larger failure threshold dose.Total dose effect of SRAM is of the imprinting kind

and the stored state has significant influences on its irradiation damage effects.