LIU Tianwei1, 2 DONG Chuang2 DENG Xinlu2 CHEN Xi3 1. Structure and properties of ZrN films prepared by ECR-microwave plasma source enhanced sputtering under different bias voltages[J]. Nuclear techniques, 2005, (6): 424-429.
LIU Tianwei1, 2 DONG Chuang2 DENG Xinlu2 CHEN Xi3 1. Structure and properties of ZrN films prepared by ECR-microwave plasma source enhanced sputtering under different bias voltages[J]. Nuclear techniques, 2005, (6): 424-429.DOI:
The ZrN thin films were prepared on #45 steel by using ECR-microwave plasma source enhanced sputtering. The increase of bias voltages leads to a phase transition from amorphous state to ZrN. The AFM morphology indicates that RMS of the samples
varying from 0.311 to 0.811 nm
first increases and then decreases with increasing bias voltage. The corrosion resistance of ZrN films is gradually increased with increasing bias voltages until –120 V and then decreased. Changes of corrosion resistance can be explained by a droplet type-surface defect.