The irradiation experiments of thin C60 film stacks were performed with 1.23 GeV 56Fe ions delivered by HIRFL at Lanzhou

China. The strong electronic excitation effects including the formation of latent tracks were analyzed by means of Raman scattering spectroscopy. The analysis results indicated that some components of high-pressure-high-temperature phase of the polymerized C60 appeared in the irradiated C60 films and finally amorphous transformation of C60 molecule took place. The damage cross-sections of the C60 molecule or cross-section of latent track of Fe ions in C60 films σ deduced from the Raman spectra data are between 1.1 and 4.5nm2 for the electronic energy losses from 3.5 to 8.7 keV/nm and the corresponding efficient radii of the latent tracks are between 1.0 and 2.1nm. The electronic energy transfer dominates the damage process of C60 films. The partial recovery of the damage in the irradiated C60 films at certain electronic energy losses is attributed to an annealing effect of strong electronic excitation.