Mon cluster beam was produced by a new type magnetron sputter gas aggregation cluster source. The – beam was accelerated by the voltage of 0

1

3

5

10 kV and deposited onto polished p-type Si(111) substrate surface at room temperature

respectively

and then the thin film samples of Mo/Si(111) were prepared. X-ray diffraction analysis showed that there was no MoSi2 thin film formation in the area interface of Mo/Si(111) samples deposited by using both regular magnetron sputter and new type cluster source when the accelerated voltage was no more than 5 kV

whereas at the voltage of about 10 kV

there was MoSi2 thin film formed in the area interface of Mo/Si(111) samples deposited by using the new type cluster source. Only for the accelerated voltage higher than a threshold voltage (≥3 kV in this experiment)

can the (110)oriented Mo thin film by the cluster beam deposition grow up.