The dependence of electron backscattering coefficient upon incident electron energy

material thickness and energy loss was reviewed. Effect of electron backscattering coefficient on electron processing was also described. Based on multi-pened.ation and multi-backscattering of incident electrons in multilayer materials

a program ED410 has been proposed for calculating the depth distribution of electron energy deposition and the dose factor in different substracte materials for different incident energy. By using a substrate and its backscattering effect

irradiation uniformity in electron processing can be improved greatly.