The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED i. presented and the enhanced deposition of Xe. is found superior to that of Ar. . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pcH4/PAr. Finally given is a brief introduction to a high quality a - SiCiH film which is prepared by PE CVD and can exhibit green luminescence at room temperature.