CMOS APS光电器件单粒子效应电荷收集特性仿真分析

安恒; 杨生胜; 苗育君; 薛玉雄; 曹洲; 王俊; 张晨光

doi:10.11889/j.0253-3219.2017.hjs.40.070502

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CMOS APS光电器件单粒子效应电荷收集特性仿真分析

核物理、交叉学科研究 | 更新时间：2021-05-19

- CMOS APS光电器件单粒子效应电荷收集特性仿真分析
- Simulation of characteristic of charge collecting for CMOS APS with single event effects
- 核技术 2017年40卷第7期文章编号：070502
- 作者机构：
  
  兰州空间技术物理研究所真空技术与物理重点实验室兰州 730000
- 作者简介：
  
  [ "安恒, 男, 1982年出生, 2010年于山东大学获硕士学位, 研究领域为空间辐射效应及新型有效载荷技术", "AN Heng, male, born in 1982, graduated from Shandong University with a master’s degree in 2010, focusing on space radiation effect andpayload" ]
- 基金信息：
  
  国家自然科学基金(11375078)
- DOI：10.11889/j.0253-3219.2017.hjs.40.070502
  中图分类号： TL99
- 收稿日期：2017-02-01，
  
  修回日期：2017-04-11，
  
  纸质出版日期：2017-07-10
- 稿件说明：
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安恒, 杨生胜, 苗育君, 等. CMOS APS光电器件单粒子效应电荷收集特性仿真分析[J]. 核技术, 2017,40(7):070502

Heng AN, Shengsheng YANG, Yujun MIAO, et al. Simulation of characteristic of charge collecting for CMOS APS with single event effects[J]. Nuclear techniques, 2017, 40(7): 070502
安恒, 杨生胜, 苗育君, 等. CMOS APS光电器件单粒子效应电荷收集特性仿真分析[J]. 核技术, 2017,40(7):070502 DOI： 10.11889/j.0253-3219.2017.hjs.40.070502.

Heng AN, Shengsheng YANG, Yujun MIAO, et al. Simulation of characteristic of charge collecting for CMOS APS with single event effects[J]. Nuclear techniques, 2017, 40(7): 070502 DOI： 10.11889/j.0253-3219.2017.hjs.40.070502.

摘要

卫星在轨飞行期间，星载电子器件将不可避免地遭受空间带电粒子的辐射，随着半导体技术的不断进步，电子器件的单粒子效应敏感性越来越高，已经成为一个影响其可靠性的重要因素。互补金属氧化物半导体（Complementary Metal Oxide Semiconductor Active Pixel Sensor

CMOS APS）光电器件因其低功耗、小体积和微重量的优点已成为遥感卫星成像的重要发展方向。为获取CMOS APS光电器件在遭受带电粒子辐射后性能变化的特征，在分析SOI MOSFET（Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor）结构和特性的基础上，通过理论分析和数值模拟，分析了重离子在CMOS APS光电器件中引起的辐射损伤，分析晶体管和光电二极管的电荷收集机理。通过TCAD（Technology Computer Aided Design）模拟了电荷收集过程，分析了影响漏电流变化的直接因素，获得了重离子LET（Linear Energy Transition）值、入射位置以及器件偏置电压与漏电流的相互关系，为后续CMOS APS的重离子模拟试验以及抗辐射加固设计提供了理论支撑。

Abstract

Background

Complementary metal oxide semiconductor active pixel sensor (CMOS APS) with less energy consumption

small volume and less weight is already a major development direction of imaging for remote sensing satellites. During the satellites flying on orbit

electron devices are exposed in space radiation

and degraded by space charged particles. Along with the improvement of semiconductor technology

sensibility of single event effect is more obvious

and is a key factor of reliability.

Purpose

This study aims to obtain the characteristics of CMOS APS subjected to charged particles.

Methods

Based on analysis of structure and characteristic of silicon on insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET)

radiation damage of CMOS APS irradiated by heavy ions is discussed using the method of theoretical analysis and numerical simulation. And charge collect mechanism of the transistor and photodiode is also analyzed.

Results

The procedure of charge collecting is simulated by technology computer aided design (TCAD)

and obtained the relationship between the leakage current and linear energy transition (LET)

incidence position of heavy ion

offset voltage.

Conclusion

The result could be used for CMOS APS's single event effect and also provide theoretical guide for the design of radiation hardening.

关键词

Keywords

references

C Virmontois , A Toulemont , G Rolland , . Radiation-induced dose and single event effects in digital CMOS image sensors . IEEE Transactions on Nuclear Science , 2014 . 6 ( 61 ): 3331 - 3340 . DOI: 10.1109/TNS.2014.2369436 http://doi.org/10.1109/TNS.2014.2369436 .

曹洲 , 把得东 , 薛玉雄 , . 图像传感器单粒子效应脉冲激光实验研究 . 真空与低温 , 2014 . 2 ( 3 ): 132 - 135 . DOI: 10.3969/j http://doi.org/10.3969/j .

Zhou CAO , Dedong BA , Yuxiong XUE , . Experimental research on single event effects of CMOS APS image sensor . Vacuum and Cryogenics , 2014 . 2 ( 3 ): 132 - 135 .

J Bogaerts , B Dierickx , G Meynants , . Total dose and displacement damage effects in a radiation-hardened CMOS APS . Transactions Electron Devices , 2003 . 50 ( 1 ): 84 - 90 . DOI: 10.1109/TED.2002.807251 http://doi.org/10.1109/TED.2002.807251 .

P R Rao , X Wang , A J P Theuwissen . Degradation of CMOS image sensors in deep-submicron technology due to irradiation . Solid-State Electron , 2008 . 52 ( 9 ): 1407 - 1413 . DOI: 10.1016/j.sse.2008.04.023 http://doi.org/10.1016/j.sse.2008.04.023 .

马毅超 , 朱纳 , 党宏斌 , . LED电子束辐照试验在线监测系统 . 核技术 , 2016 . 39 ( 5 ): 050401 DOI: 10.11889/j.0253-3219.2016 http://doi.org/10.11889/j.0253-3219.2016 http://www.j.sinap.ac.cn/hejishu/CN/abstract/abstract584.shtml .

Yichao MA , Na ZHU , Hongbin DANG , . Online monitor system of LED electron beam irradiation experiment . Nuclear Techniques , 2016 . 39 ( 5 ): 050401 http://www.j.sinap.ac.cn/hejishu/CN/abstract/abstract584.shtml .

V Goiffon , M Estribeau , O Marcelot , . Radiation effects in pinned photodiode CMOS image sensors: pixel performance degradation due to total ionizing dose . IEEE Transactions on Nuclear Science , 2012 . 59 ( 6 ): 2878 - 2887 . DOI: 10.1109/TNS.2012.2222927 http://doi.org/10.1109/TNS.2012.2222927 .

P E Dodd , M R Shaneyfelt , J R Schwank , . Current and future challenges in radiation effects on CMOS electronics . IEEE Transactions on Nuclear Science , 2010 . 57 ( 4 ): 1747 - 1763 . DOI: 10.1109/TNS.2010.2042613 http://doi.org/10.1109/TNS.2010.2042613 .

G Hopkinson , A Mohammadzadeh , R Harboe-Sorensen . Radiation effects on a radiation-tolerant CMOS active pixel sensor . IEEE Transactions on Nuclear Science , 2004 . 51 ( 5 ): 2753 - 2762 . DOI: 10.1109/TNS.2004.835108 http://doi.org/10.1109/TNS.2004.835108 .

王军 , 李国宏 . CMOS图像传感器在航天遥感中的应用 . 航天返回与遥感 , 2008 . 29 ( 2 ): 42 - 47 . DOI: 10.3969/j http://doi.org/10.3969/j .

Jun WANG , Guohong LI . The application of CMOS image sensor in space remote sensing . Spacecraft Recovery & Remote Sensing , 2008 . 29 ( 2 ): 42 - 47 .

孟祥提 , 康爱国 , 黄强 . γ射线辐照对数字型彩色CMOS图像传感器输出特性的影响 . 原子能科学技术 , 2004 . 38(增1) 231 - 215 . DOI: 10.3969/j http://doi.org/10.3969/j .

Xiangti MENG , Aiguo KANG , Qiang HUANG . Effect of gamma-ray irradiation on output characteristic of color CMOS digital image sensors . Atomic Energy Science and Technology , 2004 . 38(z1) ( z1 ): 231 - 215 .

周彦平 , 王晓明 , 常国龙 , . CMOS图像传感器的辐射实验 . 红外与激光工程 , 2011 . 40 ( 7 ): 1270 - 1273 . DOI: 10.3969/j http://doi.org/10.3969/j .

Yanping ZHOU , Xiaoming WANG , Guolong CHANG , . Radiation experiment of CMOS image sensor . Infrared and Laser Engineering , 2011 . 40 ( 7 ): 1270 - 1273 .

杜明 , 邹黎 , 李晓辉 , . Buffer单元单粒子效应及其若干影响因素研究 . 电子器件 , 2014 . 37 ( 2 ): 186 - 198 . DOI: 10.3969/j http://doi.org/10.3969/j .

Ming DU , Li ZOU , Xiaohui LI , . A research in the Buffer cell single event effects and some of its influencing factors . Electronics Device , 2014 . 37 ( 2 ): 186 - 198 .

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