增强型GaN HEMT器件5 MeV质子辐照试验研究

邱一武; 董磊; 殷亚楠; 周昕杰

doi:10.11889/j.0253-3219.2024.hjs.47.120503

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增强型GaN HEMT器件5 MeV质子辐照试验研究

核物理、交叉学科研究 | 更新时间：2024-12-31

- 增强型GaN HEMT器件5 MeV质子辐照试验研究
- Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices
- 核技术 2024年47卷第12期文章编号：120503
- 作者机构：
  
  中国电子科技集团公司第五十八研究所无锡214035
- 作者简介：
  
  邱一武，男，1993年出生，2019年于哈尔滨工业大学获硕士学位，工程师，主要从事抗辐射IC设计，宽禁带半导体器件辐射效应及可靠性分析
  周昕杰，E-mail：zhouxinjie2000@sina.com
- 基金信息：
  
  抗辐照应用技术创新中心创新基金(KFZC2021010202)
- DOI：10.11889/j.0253-3219.2024.hjs.47.120503
  中图分类号： TN386
- 纸质出版日期：2024-12-15，
  
  收稿日期：2024-07-09，
  
  修回日期：2024-09-09，
- 稿件说明：
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邱一武,董磊,殷亚楠等.增强型GaN HEMT器件5 MeV质子辐照试验研究[J].核技术,2024,47(12):120503.

QIU Yiwu,DONG Lei,YIN Yanan,et al.Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices[J].NUCLEAR TECHNIQUES,2024,47(12):120503.
邱一武,董磊,殷亚楠等.增强型GaN HEMT器件5 MeV质子辐照试验研究[J].核技术,2024,47(12):120503. DOI： 10.11889/j.0253-3219.2024.hjs.47.120503. CSTR： 32193.14.hjs.CN31-1342/TL.2024.47.120503.

QIU Yiwu,DONG Lei,YIN Yanan,et al.Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices[J].NUCLEAR TECHNIQUES,2024,47(12):120503. DOI： 10.11889/j.0253-3219.2024.hjs.47.120503. CSTR： 32193.14.hjs.CN31-1342/TL.2024.47.120503.

摘要

氮化镓器件凭借优异的性能在抗辐照应用领域备受关注，为探究不同结构的氮化镓器件抗质子辐照能力，开展了对增强型Cascode级联结构和P-GaN栅结构GaN高电子迁移率晶体管（High Electron Mobility Transistor，HEMT）器件的5 MeV质子辐照试验，分析器件电学特性退化规律，并明确其质子辐照效应损伤机制。试验发现，质子辐照注量越大，Cascode结构器件阈值电压负漂越严重，同时饱和漏极电流增加越显著，当质子注量大于1×10

p∙cm

-2

时，器件电学特性退化程度开始降低。对于P-GaN栅结构GaN HEMT而言，辐照后电学特性退化规律与Cascode结构器件截然相反，且退化程度明显小于Cascode结构器件，表明增强型Cascode结构器件对质子辐照更加敏感。结合低频噪声测试，发现随辐照注量的增加，Cascode结构器件噪声功率谱密度先增加后保持稳定，其变化规律与电学特性退化情况相吻合。分析认为，5 MeV质子辐照诱导发生电离损伤使Cascode结构器件内部级联的Si基金属-氧化物-半导体场效应晶体管（Metal-Oxide-Semiconductor Field Effect Transistor，MOSFET）栅氧化层产生了更多的氧化物陷阱电荷与界面态陷阱电荷，是Cascode结构器件对质子辐照敏感的主

要原因。研究结果对GaN功率器件加固设计和航天应用器件选型具有一定的参考价值。

Abstract

Background

GaN-based high electron mobility transistor (HEMT) has been widely used in satellite communication

space station and other fields due to its high thermal conductance

high breakdown voltage and radiation resistance. However

the existence of a large number of high-energy particles in space will induce defects in the device

resulting in the performance degradation or even failure of the device

which seriously threatens the reliability of the device.

Purpose

This study aims to investigate the anti-proton irradiation damage ability of enhancement mode gallium nitride devices with different structures

analyze the degradation rule of the devices' electrical characteristics after proton irradiation

and clarify the damage mechanism of proton irradiation.

Methods

First of all

the enhancement mode Cascode structure devices manufactured by Transphorm corporation and P-GaN gate structure GaN HEMTs manufactured by Innoscience corporation were taken as irradiation samples. Then

a 5 MeV proton irradiation experiment with irradiation dose of 2×10

p∙cm

-2

1×10

p∙cm

-2

1×10

p∙cm

-2

was carried out using the EN-18 serial electrostatic accelerator at Peking university for Cascode structure samples whilst only 1×10

p∙cm

-2

for P-GaN gate structure samples. The irradiation was carried out at room temperature

and the devices were not biased during the experiment. After each irradiation dose

drain current (

)

threshold voltage (

)

and gate leakage current (

) were electrically characterized in all the samples. Finally

Kesight B1500A semiconductor parameter tester and LFN-1000 low-frequency noise testing system were employed to test the elec

trical characteristics and low-frequency noise of these samples before and after irradiation.

Results

The experimental results show that the threshold voltage negative drift of the Cascode device becomes more serious with the increase of proton irradiation dose

and the saturation drain current increases significantly. When the irradiation dose reaches 1×10

p∙cm

-2

the degradation of the electrical characteristics of the device begins to slow down. For P-GaN gate structure HEMT devices

the degradation law of electrical properties after irradiation is completely opposite to that of Cascode structure devices

and the degradation degree is significantly smaller than that of Cascode structure devices

indicating that Cascode structure devices are more sensitive to proton irradiation. Low-frequency noise test results show that the noise power spectral density of the device increases first and then tends to be stable with the increase of the irradiation dose

and its change law is consistent with the degradation of electrical characteristics.

Conclusions

Results of this study demonstrate that the ionization damage effect induced by 5 MeV proton irradiation produces more oxide trap charges and interfacial trap charges in the cascade Si MOSFET gate oxide layer of Cascode structure device

which is the main reason for its sensitivity to proton irradiation. This study provides a certain reference value for the reinforcement design of GaN power devices and the selection of aerospace devices.

关键词

增强型GaN HEMT器件质子辐照电学特性低频噪声损伤机制

Keywords

Enhancement-mode GaN HEMTsProton-irradiationElectrical characteristicsLow frequency noiseDamage mechanism

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